Equipment: Oxford NGP-80 (external link) – Grant: CNpQ (Proc. 550504/2012-5)
Manager: Fred Cioldin
Backup:
Description: The PECVD (Plasma Enhanced Chemichal Vapor Deposition) is used for plasma assisted deposition. The PECVD is used to deposit silicon nitride, silicon oxide and silicon oxynitride.
Resources :
Gases: CF4, SiH4 (100%), NH3, N2O, N2,
Depositing materials: SiNx, SiOx, SiOxNy;
Deposition rate: 150-900 A/min;
Restrictions: See usage rules (in Portuguese)
Other information: NGP-80.